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M5060TB600 +BOM
Single Rectifier Bridge Diode 600V 60A 5-Pin
MODULE-
Manufacturer:
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Mfr.Part #:
M5060TB600
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Datasheet:
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Diode Type:
Three Phase
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Technology:
Standard
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Voltage - Peak Reverse (Max):
600 V
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Current - Average Rectified (Io):
60 A
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EDA/CAD Models:
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Availability: 6503 PCS
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M5060TB600 General Description
What sets the M5060TB600 apart is its innovative design featuring six fully isolated IGBT chips in a parallel configuration within a compact dual inline package (DIP) module. This configuration not only allows for high power density but also enables efficient heat dissipation, making it an ideal solution for applications where space is limited. Whether you are looking to optimize the performance of your motor drive or improve the efficiency of your power supply, the M5060TB600 is the power module you can count on for reliable and consistent operation. Experience the benefits of Mitsubishi Electric's cutting-edge technology with the M5 series power module
Specifications
Category | Discrete Semiconductor ProductsDiodesBridge Rectifiers | Series | - |
Diode Type | Three Phase | Technology | Standard |
Voltage - Peak Reverse (Max) | 600 V | Current - Average Rectified (Io) | 60 A |
Voltage - Forward (Vf) (Max) @ If | 1.35 V @ 50 A | Operating Temperature | -40°C ~ 125°C (TJ) |
Mounting Type | Chassis Mount | Product Category: | Discrete Semiconductor Modules |
Product: | Diode Power Modules | Type: | SCR Module |
Technology: | Si | Vf - Forward Voltage: | 1.35 V |
Vr - Reverse Voltage: | 600 V | Mounting Style: | Screw Mounts |
Minimum Operating Temperature: | - 40 C | Maximum Operating Temperature: | + 125 C |
Series: | M50 Diode | Configuration: | Series Connection - 2 Diodes |
Output Current: | 60 A | Product Type: | Discrete Semiconductor Modules |
Factory Pack Quantity: | 15 | Subcategory: | Discrete Semiconductor Modules |
Unit Weight: | 3.739040 oz |
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In Stock: 6,503
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