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MA4P604-258 +BOM

PIN Diode Attenuator/Switch 1KV

MA4P604-258 General Description

MACOM's broad line of packaged PIN diodes encompass a comprehensive range of electrical characteristics and package outlines. This diverse union of semiconductor technology and chip packaging gives considerable flexibility to the circuit designer. The fast switching series of Packaged PIN Diodes utilize a thin I-region, silicon oxide or glass passivated chip which provides for low leakage current and low insertion loss. With the use of in process control monitors to regulate wafer fabrication parameters, these devices will achieve consistent performance in control circuit applications. The high voltage product line of Packaged PIN Diodes employs MACOM's CERMACHIP® passivation process which provides for a hard glass encapsulation that hermetically seals and protects the active area of the chip. These packaged CERMACHIP® PIN diodes are ideally suited for use in high power applications where high level RF voltages are present. The diode chips are bonded into sealed ceramic packages that are designed for the most stringent electrical and environmental conditions. An extensive choice of package styles are available which may be used in a wide variety of RF microwave circuits. The Packaged PIN Diodes series are designed to have a high inherent reliability and may be ordered screened to meet many MIL-STD requirements.

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Key Features

  • High Power
  • Assortment of Packages Styles
  • Wide Selection of Capacitances
  • Wide Selection of Carrier Lifetimes
  • Voltage Ratings to 1500 Volts
  • Fast Speed
  • Available Screened for Military Applications
  • RoHS Compliant
  • ISM
MACOM Technology Solutions Original Stock

Application

  • Total Capacitance: 0.5 pF
  • Total Capacitance: 0.68 pF
  • Min Frequency: 1 MHz
  • Resistance: 1 Ohm
  • CW Power Dissipation: 15 W
  • Breakdown Voltage, Minimum: 1,000 V
  • Max Frequency: 2,500 MHz
  • Lifetime: 3,000 nS

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