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See Technical Specifications

MG30G6EL1 +BOM

Efficient switching and amplification capabilities make it a popular choice

Manufacturer:

Toshiba America Electronic Components
Mfr.Part #:

MG30G6EL1
Datasheet:

MG30G6EL1 Datasheet (PDF)
Part Life Cycle Code:

Obsolete
Pin Count:

17
ECCN Code:

EAR99
Case Connection:

ISOLATED
EDA/CAD Models:

Request Free CAD Models for MG30G6EL1

MG30G6EL1 General Description

The MG30G6EL1 POWER TRANSISTOR MODULE is a versatile solution for three-phase bridge configurations, offering high performance and reliability. With a VISo rating of 2.5kV (RMS) and an isolated case design, this module is well-suited for demanding industrial environments. Featuring a single circuit per package, it simplifies installation and maintenance processes. The module's V(BR)CEO rating of 450V and V(BR)CBO rating of 600V ensure robust performance under high voltage conditions. With a maximum collector current of 30A and efficient power dissipation capabilities, this module is a dependable choice for various applications

Specifications

Source Content uid	MG30G6EL1	Part Life Cycle Code	Obsolete
Pin Count	17	ECCN Code	EAR99
Case Connection	ISOLATED	Collector Current-Max (IC)	30 A
Collector-Emitter Voltage-Max	450 V	Configuration	COMPLEX
DC Current Gain-Min (hFE)	100	JESD-30 Code	R-PUFM-X15
Number of Elements	6	Number of Terminals	15
Polarity/Channel Type	NPN	Qualification Status	Not Qualified
Surface Mount	NO	Terminal Form	UNSPECIFIED
Terminal Position	UPPER	Transistor Application	SWITCHING
Transistor Element Material	SILICON