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MGD623N +BOM

Power transistor with a maximum power dissipation of 150W

MGD623N General Description

IGBT 600 V 50 A 150 W Through Hole TO-3P

Specifications

place launch_date Jul 20, 2009
last_inspection_date 01 MAY 2023 supplier_cage_code JSHD3
htsusa schedule_b 8541290080
ppap False aec
Series - IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 600 V Current - Collector (Ic) (Max) 50 A
Current - Collector Pulsed (Icm) 100 A Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 50A
Power - Max 150 W Switching Energy -
Input Type Standard Td (on/off) @ 25°C 75ns/300ns
Test Condition 300V, 50A, 39Ohm, 15V Reverse Recovery Time (trr) 300 ns
Operating Temperature 150°C (TJ) Mounting Type Through Hole
Base Product Number MGD623

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Ratings and Reviews

More
N
N**a 12/21/2022

The XC7K410T-2FFG900I components purchased from Avaq were a game-changer. Impeccable quality, superb functionality, and a seamless buying experience.

10
M
M**n 08/21/2020

Next time, see what you send.

15
A
A**n 02/23/2020

All O.K.Very good delivery time.Thank you.YoursStanislaw

5
D
D**o 02/13/2020

Ordered 10 pcs.Arrived 7 pcs mbr20200 and 3 pcs mb20100Personally for me is not critical.

15

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