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See Technical Specifications

MMZ25332B4T1 +BOM

InGaP HBT Linear Amplifier, 1427-2700 MHz, 26.5 dB, 33 dBm

Manufacturer:

NXP Semiconductor
Mfr.Part #:

MMZ25332B4T1
Datasheet:

MMZ25332B4T1 Datasheet (PDF)
Frequency (Min) (MHz):

1427
Frequency (Max) (MHz):

2700
Supply Voltage (Min-Max) (V):

3 to 5
Gain (Typ) (dB) @ F (MHz):

26.5 @ 2500
EDA/CAD Models:

Request Free CAD Models for MMZ25332B4T1

MMZ25332B4T1 General Description

The MMZ25332B4 is a versatile 2-stage power amplifier targeted at driver and pre-driver applications for macro and micro base stations and final stage applications for small cells. Its versatile design allows operation in any frequency band from 1427 to 2700 MHz providing gain of more than 26.5 dB. The device operates off a 5 V supply, and its bias currents and portions of the matching networks are adjustable for optimum performance in any specific application. It is housed in a QFN 4 x 4 surface mount package which allows for maximum via hole pattern. The MMZ25332B4 offers high reliability, ruggedness and ESD performance.

Key Features

InGaP HBT LINEAR AMPLIFIER, 1500-2700 MHz, 26.5 dB, 33 dBm

Specifications

Frequency (Min) (MHz)	1427	Frequency (Max) (MHz)	2700
Supply Voltage (Min-Max) (V)	3 to 5	Gain (Typ) (dB) @ f (MHz)	26.5 @ 2500
P1dB (dBm)	33