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Bipolar (BJT) Transistor Array 2 NPN, 2 PNP 30V 500mA 200MHz 650mW Through Hole TO-116
TO-116Manufacturer:
Mfr.Part #:
MPQ6002 PBFREE
Datasheet:
Mounting Style:
Through Hole
Transistor Polarity:
NPN, PNP
Configuration:
Quad
Collector- Emitter Voltage VCEO Max:
30 V
EDA/CAD Models:
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Bipolar (BJT) Transistor Array 2 NPN, 2 PNP 30V 500mA 200MHz 650mW Through Hole TO-116
Product Category | Bipolar Transistors - BJT | Mounting Style | Through Hole |
Transistor Polarity | NPN, PNP | Configuration | Quad |
Collector- Emitter Voltage VCEO Max | 30 V | Collector- Base Voltage VCBO | 60 V |
Emitter- Base Voltage VEBO | 5 V | Collector-Emitter Saturation Voltage | 1.4 V |
Pd - Power Dissipation | 650 mW | Gain Bandwidth Product fT | 200 MHz |
Minimum Operating Temperature | - 65 C | Maximum Operating Temperature | + 150 C |
Series | MPQ6 | Continuous Collector Current | 500 mA |
DC Collector/Base Gain hfe Min | 30 | Product Type | BJTs - Bipolar Transistors |
Factory Pack Quantity | 25 | Subcategory | Transistors |
Technology | Si | Unit Weight | 0.014110 oz |
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