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MSCSM120SKM11CT3AG +BOM

Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F

MSCSM120SKM11CT3AG General Description

Power Driver Module MOSFET 1 Phase 1.2 kV 254 A Module

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Specifications

Product Category Discrete Semiconductor Modules Product Power MOSFET Modules
Type Buck Chopper Technology SiC
Vf - Forward Voltage 1.5 V at 180 A Vr - Reverse Voltage 1.2 kV
Vgs - Gate-Source Voltage - 10 V, + 25 V Mounting Style Screw Mount
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 125 C
Fall Time 25 ns Id - Continuous Drain Current 254 A
Pd - Power Dissipation 1.067 kW Product Type Discrete Semiconductor Modules
Rds On - Drain-Source Resistance 10.4 mOhms Rise Time 30 ns
Factory Pack Quantity 1 Subcategory Discrete Semiconductor Modules
Transistor Polarity N-Channel Typical Turn-Off Delay Time 50 ns
Typical Turn-On Delay Time 30 ns Vds - Drain-Source Breakdown Voltage 1.2 kV
Vgs th - Gate-Source Threshold Voltage 1.8 V

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