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MT8HTF12864HDY-667E1 +BOM

High-speed DDR DRAM Module offering 128MX64 capacity, CMOS build, and PDMA200 compatibility

Manufacturer:

MICRON TECHNOLOGY INC
Mfr.Part #:

MT8HTF12864HDY-667E1
Datasheet:

MT8HTF12864HDY-667E1 Datasheet (PDF)
Part Life Cycle Code:

Obsolete
ECCN Code:

EAR99
HTS Code:

8542.32.00.36
Access Time-Max:

0.45 ns
EDA/CAD Models:

Request Free CAD Models for MT8HTF12864HDY-667E1

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MT8HTF12864HDY-667E1 General Description

Elevate your desktop computer's capabilities with the MT8HTF12864HDY-667E1 DDR2 SDRAM module, delivering high-speed performance and efficiency. Its design and specifications make it an ideal choice for users looking for a reliable and seamless computing experience, backed by industry-standard quality and long-term compatibility. Whether for work or leisure, this module ensures that your system can handle multitasking and demanding applications with ease and speed

Specifications

Part Life Cycle Code	Obsolete	Reach Compliance Code
ECCN Code	EAR99	HTS Code	8542.32.00.36
Access Time-Max	0.45 ns	Clock Frequency-Max (fCLK)	333 MHz
I/O Type	COMMON	JESD-30 Code	R-PDMA-N200
Memory Density	8589934592 bit	Memory IC Type	DDR DRAM MODULE
Memory Width	64	Number of Terminals	200
Number of Words	134217728 words	Number of Words Code	128000000
Operating Temperature-Max	70 °C	Operating Temperature-Min
Organization	128MX64	Output Characteristics	3-STATE
Power Supplies	1.8 V	Qualification Status	Not Qualified
Refresh Cycles	8192	Standby Current-Max	0.056 A
Supply Current-Max	2.16 mA	Supply Voltage-Nom (Vsup)	1.8 V
Surface Mount	NO	Technology	CMOS
Temperature Grade	COMMERCIAL	Terminal Form	NO LEAD
Terminal Pitch	0.6 mm	Terminal Position	DUAL