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See Technical Specifications

MT9P031I12STM-DP +BOM

CMOS Image Sensor 2592H x 1944V 2.2µm x 2.2µm 48-iLCC (10x10)

Manufacturer:

onsemi
Mfr.Part #:

MT9P031I12STM-DP
Datasheet:

MT9P031I12STM-DP Datasheet (PDF)
Type:

CMOS
Pixel Size:

2.2µm x 2.2µm
Active Pixel Array:

2592H x 1944V
Frames Per Second:

53
EDA/CAD Models:

Request Free CAD Models for MT9P031I12STM-DP

Email: [email protected]

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Tel: +852 95804164

MT9P031I12STM-DP General Description

The MT9P031I12STM-DP from ON Semiconductor stands out for its pixel performance excellence, delivering exceptional image quality that is unmatched. With superior color accuracy, low-light sensitivity, and minimal noise level, this sensor is a game-changer in the world of imaging technology. Its cost-effective design makes it a practical choice for various applications, offering high-speed image capture capabilities that are second to none. Additionally, the sensor offers adjustable functions such as gain, frame rate, and exposure, giving users full control over their imaging needs while consuming minimal power

Key Features

High frame rate

Superior low-light performance

Low dark current

Global reset release, which starts the exposure of all

rows simultaneously

Bulb exposure mode, for arbitrary exposure times

Snapshot mode to take frames on demand

Horizontal and vertical mirror image

Column and row skip modes to reduce image size

without reducing field-of-view (FOV)

Column and row binning modes to improve image

quality when resizing

Simple two-wire serial interface

Programmable controls: gain, frame rate, frame size,

exposure

Automatic black level calibration

On-chip phase-locked loop (PLL)

Application

Shielding belongings
Defending against threats
Ensuring safety measures

Specifications

Type	CMOS	Pixel Size	2.2µm x 2.2µm
Active Pixel Array	2592H x 1944V	Frames per Second	53
Voltage - Supply	1.7V ~ 3.1V	Operating Temperature	-30°C ~ 70°C
Base Product Number	MT9P031