This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

MTB2P50E +BOM

Power MOSFET -500V -2A 6 Ohm Single P-Channel D2PAK

Manufacturer:

ON
Mfr.Part #:

MTB2P50E
Datasheet:

MTB2P50E Datasheet (PDF)
Part Life Cycle Code:

Transferred
ECCN Code:

EAR99
Case Connection:

DRAIN
Configuration:

SINGLE
EDA/CAD Models:

Request Free CAD Models for MTB2P50E

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

MTB2P50E General Description

P-Channel Enhancement-Mode Silicon Gate

The D²PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower R_DS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

Key Features

Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I_DSS and V_DS(on) Specified at Elevated Temperature
Short Heatsink Tab Manufactured Not Sheared
Specially Designed Leadframe for Maximum Power Dissipation
Pb-Free Package is Available

Specifications

Part Life Cycle Code	Transferred	Reach Compliance Code
ECCN Code	EAR99	Case Connection	DRAIN
Configuration	SINGLE	DS Breakdown Voltage-Min	500 V
Drain Current-Max (ID)	2 A	Drain-source On Resistance-Max	6 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PSSO-G2
JESD-609 Code	e0	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Polarity/Channel Type	P-CHANNEL
Power Dissipation-Max (Abs)	75 W	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	Tin/Lead (Sn/Pb)
Terminal Form	GULL WING	Terminal Position	SINGLE
Transistor Element Material	SILICON