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NESG3031M14 +BOM

Advanced GaAs technology for reliable and efficient power amplificatio

NESG3031M14 General Description

When it comes to power management, the NESG3031M14 N-Channel Power MOSFET is a top choice for engineers and designers looking to optimize efficiency and performance. With its high voltage capabilities and low on-resistance, this MOSFET is designed to handle the demands of modern electronic systems. Its TO-263 package provides easy installation and reliable operation, while its gate threshold voltage and low gate charge ensure compatibility and fast switching speeds for improved efficiency

Key Features

  • Rapid development and prototyping enabled
  • Simplified RF design with integrated amplifier, T/R switch, and LNA
  • Frequency range of 2.4 GHz to 2.5 GHz supported
  • Low power consumption for reduced heat generation
  • Compact form factor for easy integration into IoT, smart home, and industrial systems

Application

  • Energy-efficient solutions
  • Hybrid power systems
  • Grid stability solutions

Specifications

Product Category CEL

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