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NID5001NT4 +BOM

Powerful and versatile A MOSFET for high-speed switchin

NID5001NT4 General Description

In addition to its exceptional performance and protective features, the NID5001NT4 also includes built-in Electrostatic Discharge (ESD) protection, thanks to an integrated Gate-to-Source clamp. This feature ensures that the device is resilient against ESD events, further bolstering its reliability and longevity in real-world operating conditions

Key Features

  • Smart Gate Driver Technology
  • Fault Tolerant DC-DC Conversion
  • High Frequency Operation Capability

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 42 V
Id - Continuous Drain Current 33 A Rds On - Drain-Source Resistance 23 mOhms
Vgs - Gate-Source Voltage - 14 V, + 14 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 64 W
Channel Mode Enhancement Configuration Single
Height 2.38 mm Length 6.73 mm
Product Type MOSFET Factory Pack Quantity 2500
Subcategory MOSFETs Transistor Type 1 N-Channel
Width 6.22 mm Unit Weight 0.011640 oz

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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