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NSDP301MX3T5G +BOM

Single PIN Diode for Attenuator and RF Switch

NSDP301MX3T5G General Description

Designed for high frequency applications, the NSDP301MX3T5G boasts low rs characteristics, making it a top choice for designers. Its compact and efficient design enables higher efficiency and meets reduced space requirements. The X3DFN2 miniature package is a standout feature, allowing designers to tackle the challenge of achieving higher efficiency while reducing space requirements. Moreover, the wettable flank package enhances the quality when mounted to PCB, ensuring a reliable and high-quality performance

ON Semiconductor, LLC Inventory

Key Features

  • Low Input Capacitance : Ciss = 1.5 pF typ.
  • No Latching Under Transient Conditions
  • Power Consumption ≤ 0.4 μW max.
  • Functional Operation at High Altitude
ON Semiconductor, LLC Original Stock

Application

  • Antenna Tuner
  • Phase Shifter
  • Impedance Matcher
ON Semiconductor, LLC Inventory

Specifications

Category Discrete Semiconductor ProductsDiodesRF Diodes Series -
Diode Type PIN - Single Voltage - Peak Reverse (Max) 80V
Current - Max 100 mA Capacitance @ Vr, F 0.33pF @ 0V, 1MHz
Resistance @ If, F 1.3Ohm @ 10mA, 100MHz Operating Temperature -55°C ~ 150°C (TJ)

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NSDP301MX3T5G Datasheet PDF

Preliminary Specification NSDP301MX3T5G PDF Download

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