This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

NTE858M +BOM

Mini-DIP Dual Op Amp with Low Noise Characteristics and ±18V Power Rails

Manufacturer:

NTE Electronics, Inc
Mfr.Part #:

NTE858M
Datasheet:

NTE858M Datasheet (PDF)
Amplifier Type:

J-FET
Number Of Circuits:

2
Slew Rate:

13V/µs
Gain Bandwidth Product:

4 MHz
EDA/CAD Models:

Request Free CAD Models for NTE858M

NTE858M General Description

The NTE858M is a high-performance silicon NPN transistor designed for high current switching applications. With a collector current of 10A and a collector-emitter voltage of 80V, it is well-equipped to handle demanding tasks. Housed in a TO-3P package, it offers excellent power dissipation and thermal performance. The built-in damper diode provides protection against back EMF during switching operations. This transistor is commonly used in power switching circuits, motor control applications, and high current amplification in various industrial and automotive applications. Its durable construction and use of high-quality materials ensure reliable performance and longevity in demanding environments

Specifications

Amplifier Type	J-FET	Number of Circuits	2
Slew Rate	13V/µs	Gain Bandwidth Product	4 MHz
Current - Input Bias	80 pA	Voltage - Input Offset	2 mV
Current - Supply	1.4mA (x2 Channels)	Voltage - Supply Span (Min)	36 V
Voltage - Supply Span (Max)	36 V	Operating Temperature	0°C ~ 70°C (TA)
Mounting Type	Through Hole