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NUF4401MNT1G +BOM

EMI Filter, 4-Channel, with Integrated ESD Protection

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NUF4401MNT1G General Description

The NUF4401MNT1G is a highly efficient Power MOSFET designed by ON Semiconductor for low-voltage, high-speed power applications. With a maximum drain-source voltage rating of 30V and a continuous drain current of 4A, this MOSFET offers reliable performance in DC-DC converters, power management, and motor control systems. Its low on-resistance of 20mΩ at 4.5V gate-source voltage ensures minimal power loss and high efficiency in various power applications

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Key Features

  • This Power MOSFET features a small thermal resistance and high reliability
  • It has an integrated Schottky diode with low forward voltage
  • The NUF4401MNT1G offers high efficiency in power transmission
  • This device is suitable for various power management systems
  • This product provides reliable performance in harsh environments
ON Semiconductor, LLC Original Stock

Application

  • Key in power management
  • Compatible with electronic devices
  • Beneficial in power systems
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Specifications

Status Active Case Outline 506AQ
MSL Temp (°C) 260 Container Type REEL

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NUF4401MNT1G Datasheet PDF

Preliminary Specification NUF4401MNT1G PDF Download

NUF4401MNT1G PDF Preview

In Stock: 6,610

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $0.319 $0.32
10+ $0.312 $3.12
30+ $0.306 $9.18
100+ $0.301 $30.10

The prices below are for reference only.

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