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Reliable and accurate, this reflective object sensor chip meets various industry needs
Module, Pre-WiredManufacturer:
TT Electronics/Optek Technology
Mfr.Part #:
OPB840W51Z
Datasheet:
Sensing Distance:
0.125" (3.18mm)
Sensing Method:
Through-Beam
Output Configuration:
Phototransistor
Current - DC Forward (If) (Max):
50 mA
EDA/CAD Models:
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TT Electronics/Optek Technology presents the OPB840W51Z, an exceptional optoswitch phototransistor featuring a sensor output of a phototransistor and a panel/chassis mounting for convenient installation. With a 3.18mm gap width and 1.27mm aperture width, this product is versatile and precise, delivering accurate results across various applications. Boasting a forward current (If) of 50mA, reverse voltage (Vr) of 2V, and forward voltage of 1.7V, the OPB840W51Z ensures efficient and consistent performance. Its DC collector current of 0.5A further enhances its reliability, making it a trustworthy choice for different projects and requirements. Moreover, this optoswitch phototransistor is compliant with RoHS standards, underscoring its adherence to environmental regulations and sustainable practices
Sensing Distance | 0.125" (3.18mm) | Sensing Method | Through-Beam |
Output Configuration | Phototransistor | Current - DC Forward (If) (Max) | 50 mA |
Current - Collector (Ic) (Max) | 30 mA | Voltage - Collector Emitter Breakdown (Max) | 30 V |
Response Time | - | Operating Temperature | -40°C ~ 80°C |
Mounting Type | Chassis Mount |
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1+ | - | - |
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