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PCGA200T65NF8M1 +BOM

onsemi IGBT 650 V, 200 A Field Stop Trench Gen3 (FS3) Bare Die with Solderable/Sinterable Top Metal. Pairing with PCRKA20065F8M1

PCGA200T65NF8M1 General Description

This 650V Field Stop Trench Gen3 (FS3) IGBT bare die has a die size of 10mm x 10mm. Its emitter pads are covered with Ni/Ag solderable/sinterable top metal, which enables advanced power module assembly technologies for emittering connection, including Ag Sintering and Cu bare soldering, etc.

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Key Features

  • AEC-Q101 Qualified
  • Maximum Junction Temperature 175°C
  • Positive Temperature Coefficient
  • Very Low Saturation Voltage: VCE(SAT) = 1.53V(Typ.) @ IC = 200A
  • Short Circuit Rated
  • Final Solderable Metal Layer
ON Semiconductor, LLC Original Stock

Application

  • Automotive Traction Modules
  • General Power Modules
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Specifications

Status Active Case Outline -
MSL Temp (°C) 0 Container Type MTFRM

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