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See Technical Specifications

PM75RL1A120 +BOM

Module for Intelligent Power

Manufacturer:

Mitsubishi Electric
Mfr.Part #:

PM75RL1A120
Datasheet:

PM75RL1A120 Datasheet (PDF)
Product:

IGBT Silicon Modules
Configuration:

7-Pack
Collector- Emitter Voltage VCEO Max:

1.2 kV
Collector-Emitter Saturation Voltage:

1.65 V
EDA/CAD Models:

Request Free CAD Models for PM75RL1A120

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PM75RL1A120 General Description

The PM75RL1A120 power module, manufactured by Mitsubishi Electric, is a true powerhouse in the industrial sector. With a maximum voltage rating of 1200V and a current rating of 75A, this insulated gate bipolar transistor (IGBT) module is a force to be reckoned with. Its high reliability and efficiency, hallmarks of the PM series, make it an invaluable asset in industrial applications such as motor drives, inverters, and power supplies. Safety and performance are paramount in the design of the PM75RL1A120, as evidenced by its built-in temperature sensor and overcurrent protection. This innovative power module also boasts low on-state voltage drop and low switching loss, delivering unrivaled efficiency and power handling capabilities. Furthermore, its compact and lightweight design, coupled with a wide operating temperature range, ensures seamless integration and top-notch performance in diverse environmental conditions

Key Features

Compact design
High performance
Ergonomic handling

Application

Home appliances
Lighting systems
HVAC systems

Specifications

Product Category	IGBT Modules	Product	IGBT Silicon Modules
Configuration	7-Pack	Collector- Emitter Voltage VCEO Max	1.2 kV
Collector-Emitter Saturation Voltage	1.65 V	Continuous Collector Current at 25 C	75 A
Pd - Power Dissipation	595 W	Minimum Operating Temperature	- 20 C
Maximum Operating Temperature	+ 150 C	Mounting Style	Screw Mount
Product Type	IGBT Modules	Factory Pack Quantity	10
Subcategory	IGBTs