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Phototransistors PT501 with Ic bin 20-80mA
TO-18Manufacturer:
Sharp Microelectronics
Mfr.Part #:
PT501A
Datasheet:
Voltage - Collector Emitter Breakdown (Max):
45 V
Current - Collector (Ic) (Max):
10 mA
Current - Dark (Id) (Max):
100 nA
Wavelength:
800nm
EDA/CAD Models:
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Phototransistors 800nm Top View TO-18-2 Metal Can
Voltage - Collector Emitter Breakdown (Max) | 45 V | Current - Collector (Ic) (Max) | 10 mA |
Current - Dark (Id) (Max) | 100 nA | Wavelength | 800nm |
Viewing Angle | 12° | Power - Max | 75 mW |
Mounting Type | Through Hole | Orientation | Top View |
Operating Temperature | -25°C ~ 125°C (TA) |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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The prices below are for reference only.
All bill of materials (BOM) can be sent via email to
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