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PUMZ1,115 +BOM

Two independently operating NPN/PNP transistors in an SC-88; SOT363 plastic package.

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PUMZ1,115 General Description

Two independently operating NPN/PNP transistors in an SC-88; SOT363 plastic package.

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Key Features

  • Low current (max. 100 mA)
  • Low voltage (max. 40 V)
  • Reduces number of components and boardspace.
  • AEC-Q101 qualified
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Application

  • General purpose switching and amplification.
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Specifications

Product Category Bipolar Transistors - BJT Mounting Style SMD/SMT
Transistor Polarity NPN, PNP Configuration Dual
Collector- Emitter Voltage VCEO Max 40 V Collector- Base Voltage VCBO 50 V
Emitter- Base Voltage VEBO 5 V Collector-Emitter Saturation Voltage 200 mV
Maximum DC Collector Current 100 mA Pd - Power Dissipation 300 mW
Gain Bandwidth Product fT 100 MHz Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C DC Collector/Base Gain hfe Min 120
DC Current Gain hFE Max 120 at 1 mA, 6 V Height 1 mm
Length 2.2 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 3000 Subcategory Transistors
Technology Si Width 1.35 mm
Part # Aliases 934034220115 Unit Weight 0.000212 oz

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In Stock: 7,462

Minimum Order: 1

Qty. Unit Price Ext. Price
5+ $0.069 $0.34
50+ $0.057 $2.85
150+ $0.051 $7.65
500+ $0.046 $23.00
3000+ $0.042 $126.00
6000+ $0.040 $240.00

The prices below are for reference only.

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