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48V DC Operating RF JFET Transistors with 45W Power Capacity
QFN-20Manufacturer:
Mfr.Part #:
QPD0030
Datasheet:
Voltage - Collector Emitter Breakdown (Max):
1.5kV
Current - Collector (Ic) (Max):
85A
Vce Saturation (Max) @ Ib, Ic:
2.6V @ 300mA, 50A
Current - Collector Cutoff (Max):
100nA
EDA/CAD Models:
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Product OverviewThe QPD0030 is a 45 W (P3dB) unmatched discrete GaN on SiC HEMT which operates from DC to 5GHz on a +48 V supply rail. It is ideally suited for base station, radar and communications applications and can support both CW and pulsed mode of operations.The QPD0030 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0030 can also be used as a driver in a macrocell base station power amplifier.The device is housed in an industry-standard 4x3 mm surface mount QFN package.Lead-free and ROHS compliant.
Product Name | QPD0030 | Product Type | Transistor |
Voltage - Collector Emitter Breakdown (Max) | 1.5kV | Current - Collector (Ic) (Max) | 85A |
Vce Saturation (Max) @ Ib, Ic | 2.6V @ 300mA, 50A | Current - Collector Cutoff (Max) | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50A, 5V | Power - Max | 375W |
Frequency - Transition | 20MHz | Mounting Type | Through Hole |
Operating Temperature | -55°C ~ 150°C |
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