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See Technical Specifications

QPD1004 +BOM

25W GaN RF Input-Matched Transistors

Manufacturer:

QORVO
Mfr.Part #:

QPD1004
Datasheet:

QPD1004 Datasheet (PDF)
Technology:

GaN on SiC
Frequency Range:

30-40 MHz
Output Power (Pout):

65W
Gain:

16.8 dB
EDA/CAD Models:

Request Free CAD Models for QPD1004

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QPD1004 General Description

The QPD1004 from Qorvo is a high-power, high-efficiency GaN on SiC RF transistor designed for applications in the 30-40 MHz range. With an output power of 65W and a gain of 16.8 dB, it's suitable for a range of applications from VHF broadcasting to military radar systems.

Key Features

Technology: GaN on SiC.
Frequency Range: Operates in the 30-40 MHz range.
Output Power (Pout): Typically around 65W.
Gain: Typically offers a gain of around 16.8 dB.
Drain Efficiency: Approximately 75%.
Operating Voltage: Typically around 50V.
Package: Offered in a two-lead flanged package.

Application

VHF Broadcasting: Given its frequency range.
Avionics: For communication and radar systems.
Military and Defense: In radar systems and other RF equipment.
Industrial and Medical: High-power RF applications.

Specifications

Product	QPD1004	Technology	GaN on SiC
Frequency Range	30-40 MHz	Output Power (Pout)	65W
Gain	16.8 dB	Drain Efficiency	75%
Operating Voltage	50V	Product Category	RF JFET Transistors
Transistor Type	HEMT	Moisture Sensitive	Yes
Product Type	RF JFET Transistors	Series	QPD1004
Factory Pack Quantity	2500	Subcategory	Transistors