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QPD1008 +BOM

high-electron-mobility transistor (HEMT) designed for high-power applications by Qorvo.

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QPD1008 General Description

The QPD1008 is a GaN (Gallium Nitride) HEMT designed for RF (Radio Frequency) power amplification in high-power applications. It's used to efficiently amplify RF signals at microwave frequencies.

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Key Features

  • Frequency Range: 1.5 GHz - 3.0 GHz
  • High Power Output
  • High Gain
  • High Efficiency
  • Wide Bandwidth
  • Rugged Design for High Reliability
  • Surface Mount Package
QORVO Original Stock

Application

  • Wireless Infrastructure (Base Stations)
  • Radar Systems
  • Satellite Communication
  • Point-to-Point Microwave Links
  • RF Energy Applications
  • Military Communication Systems

Specifications

Product Name QPD1008 Product Type GaN on SiC High Electron Mobility Transistor (HEMT)
Frequency Range 0.03GHz to 1.1GHz Output Power 52.5dBm
Operating Voltage 50V Operating Temperature -40°C to +150°C
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QPD1008 Equivalent Parts

You may consider these replacement and alternative parts:

Part Number

In-Stock

Package

Description

Part Number:  MAGX-001214-650L00

In-Stock:  Inquire Now

Package:  

Description:   A similar GaN HEMT with comparable power and frequency characteristics.

Part Number:  CGHV14200F

In-Stock:  Inquire Now

Package:  

Description:   A GaN HEMT designed for high-power RF amplification.

Part Number:  CGH40010F

In-Stock:  Inquire Now

Package:  

Description:   A GaN HEMT for high-power RF applications.

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In Stock: 6,208

Minimum Order: 1

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