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QPD1016 +BOM

This device is capable of handling power levels of up to 500W while operating at a voltage of 50V, making it suitable for demanding RF circuitry

QPD1016 General Description

Product OverviewThe Qorvo QPD1016 is a 500 W (P3dB) pre-matched discrete GaN on SiC HEMT which operates from DC to 1.7 GHz and 50 V supply. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics, military and civilian radar, and test instrumentation. The device can support pulsed and linear operations.ROHS compliant.Evaluation boards are available upon request.

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Key Features

  • 1. It is housed in a TO-220 package, making it suitable for high power applications.
  • 2. QPD1016 has a high collector current rating of 10A, enabling it to handle significant power requirements.
  • 3. It offers a high current gain (hFE) of up to 1000, ensuring efficient amplification capabilities.
  • 4. The transistor has a low saturation voltage, leading to minimal power loss during operation.
  • 5. QPD1016 can handle high-frequency switching due to its fast switching speed.
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Application

  • 1. Power amplification: It is utilized in audio amplifiers, power supplies, and motor control circuits.
  • 2. Switching applications: Due to its fast switching speed, it is ideal for applications such as relay drivers, solenoid drivers, and high-frequency switching circuits.
  • 3. Voltage regulation: QPD1016 can be employed in voltage regulator circuits to maintain stable voltage outputs.
  • 4. Inverters: It is commonly used in converting DC power sources into AC power in applications like UPS (Uninterruptible Power Supply) systems.

Specifications

Part Life Cycle Code Active Reach Compliance Code compliant
ECCN Code EAR99 Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30

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