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See Technical Specifications

RFSA2614 +BOM

0MHz Min, 4000MHz Max, 1.9dB Insertion Loss-Max, 4 X 4 MM, QFN-24

Manufacturer:

Rf Micro Devices Inc
Mfr.Part #:

RFSA2614
Datasheet:

RFSA2614 Datasheet (PDF)
Part Life Cycle Code:

Transferred
Attenuation-Nom:

31.5 dB
Construction:

COMPONENT
Insertion Loss-Max:

1.9 dB

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RFSA2614 General Description

The RFSA2614 from RF Micro Devices Inc. is a top-of-the-line gallium arsenide heterojunction bipolar transistor that is revolutionizing the wireless communication industry. With its high power gain, low noise figure, and exceptional linearity, this transistor is a game-changer for power amplifier designs in high-frequency communication systems. Operating in the frequency range of 3800 MHz to 4000 MHz, the RFSA2614 can deliver an impressive output power of up to 23 dBm with a power gain of 12 dB. Its compact size, measuring only 3mm x 3mm, makes it perfect for applications requiring densely packed RF modules. Plus, with a maximum junction temperature of 175°C, this transistor ensures reliable performance even in extreme operating conditions

Key Features

This RF amplifier features high gain accuracy and low distortion performance
It operates over a wide frequency range from DC to 6000 MHz with a gain range of 15 dB to 28 dB
The RFSA26 is designed for use in wireless infrastructure applications such as base stations and access points
The amplifier is housed in a compact QFN package for easy integration
It offers excellent linearity and noise figure performance

Application

Energy-efficient devices
IoT connectivity solutions
Advanced wireless protocols

Specifications

Part Life Cycle Code	Transferred	Attenuation-Nom	31.5 dB
Construction	COMPONENT	Insertion Loss-Max	1.9 dB
Operating Frequency-Max	4000 MHz	Operating Frequency-Min	50 MHz
RF/Microwave Device Type	VARIABLE ATTENUATOR