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SGA8343Z +BOM

RF Amplifier DC-6GHz SSG 19.3dB NF1.4dB SiGE

Manufacturer:

RFMD
Mfr.Part #:

SGA8343Z
Datasheet:

SGA8343Z Datasheet (PDF)
Description:

RF Amplifier DC-6GHz SSG 19.3dB NF1.4dB SiGE
Datasheet:

Datasheet
Availability:

Not Available
Mounting Style:

SMD/SMT

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

SGA8343Z General Description

Product DescriptionRFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to 6GHz. The SGA8343Z is optimized for 3V operation but can be biased at 2V for low-voltage battery operated systems. The device provides high gain, low NF, and excellent linearity at a low cost. It can be operated at very low bias currents in applications where high linearity is not required. The matte tin finish on the lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants.

Key Features

DC to 6GHz Operation
0.9dB NFMIN at 0.9GHz
24dB GMAX at 0.9GHz
|GOPT|=0.10 at 0.9GHz
OIP3=+28dBm, P1dB=+9dBm
Low Cost, High Performance, Versatility

Specifications

Description	RF Amplifier DC-6GHz SSG 19.3dB NF1.4dB SiGE	Datasheet	Datasheet
Availability	Not Available	Mounting Style	SMD/SMT
Type	Low Noise Amplifiers	Technology	SiGe
Operating Frequency	0 Hz to 6 GHz	P1dB - Compression Point	9 dBm
Gain	16.5 dB	Operating Supply Voltage	4 V
NF - Noise Figure	1.4 dB	OIP3 - Third Order Intercept	27.8 dBm
Operating Supply Current	50 mA	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 85 C	Series	SGA8343Z