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SI1869DH-T1-E3 +BOM

This product is part of the Si1869DH Series, featuring a compact SC-70-6 package for easy installation and integration

Manufacturer:

Vishay
Mfr.Part #:

SI1869DH-T1-E3
Datasheet:

SI1869DH-T1-E3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

2 Channel
EDA/CAD Models:

Request Free CAD Models for SI1869DH-T1-E3

Email: [email protected]

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Tel: +852 95804164

SI1869DH-T1-E3 General Description

With a drain-source voltage rating of 20V, the SI1869DH-T1-E3 is a versatile dual NPN/PNP MOSFET. Its ability to handle a continuous drain current of 1.2A for both the N-channel and the P-channel makes it suitable for various low-power applications

Key Features

The SI1869DH-T1-E3 is a MOSFET transistor by Vishay

It features a low on-resistance of typically 4

5 mΩ, a compact PowerPAK® SO-8 package, and a 30 V drain-source voltage rating

This device is suitable for various power management applications, offering efficiency and reliability in a small footprint

Application

Efficient power handling
Portable electronics
High switching speed

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	2 Channel	Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	1.2 A	Rds On - Drain-Source Resistance	165 mOhms
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	1 W	Channel Mode	Enhancement
Tradename	TrenchFET	Configuration	Dual
Product Type	MOSFET	Factory Pack Quantity	3000
Subcategory	MOSFETs	Part # Aliases	SI1869DH-T1-BE3 SI1869DH-E3
Unit Weight	0.000265 oz