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SKM300GA123D +BOM

N-channel insulated gate bipolar transistor for high-reliability designs

SKM300GA123D General Description

Whether you're designing a motor drive system, a renewable energy converter, or a grid-tied inverter, the SKM300GA123D IGBT module offers the versatility and reliability you need. Its N Channel design allows for efficient power flow and low on-state resistance, resulting in minimal power loss and improved energy efficiency

Specifications

ECCN (US) EAR99 Part Status Obsolete
Automotive No PPAP No
Channel Type N Configuration Single
Typical Collector Emitter Saturation Voltage (V) 3.1 Maximum Collector-Emitter Voltage (V) 1200
Maximum Gate Emitter Voltage (V) ±20 Maximum Continuous Collector Current (A) 300
Minimum Operating Temperature (°C) -40 Maximum Operating Temperature (°C) 150
Mounting Screw PCB changed 4
Pin Count 4

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