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SST112-T1-E3 +BOM

Part Number: SST112-T1-E3

Manufacturer:

vishay
Mfr.Part #:

SST112-T1-E3
Datasheet:

SST112-T1-E3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Configuration:

Single
EDA/CAD Models:

Request Free CAD Models for SST112-T1-E3

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SST112-T1-E3 General Description

The SST112-T1-E3 transistor sets a high standard for performance and reliability with its impressive specifications. With a breakdown voltage of -55V and a gate-source cutoff voltage max of -5V, this JFET transistor is well-equipped to handle a wide range of tasks. Its power dissipation of 350mW ensures efficient operation in various applications. Operating within a temperature range of -55°C to +150°C, this transistor is suitable for use in extreme environments. Featuring 3 pins for easy installation, the SST112-T1-E3 transistor is user-friendly and convenient. Additionally, it is RoHS compliant, demonstrating its commitment to environmental responsibility. In summary, this transistor is a top choice for those seeking a high-performance component that excels in both quality and functionality

Key Features

Low Cost
Automated Insertion Package
Low Insertion Loss
No Offset or Error Voltage Generated By Closed Switch
- Purely Resistive
- High Isolation Resistance From Driver
Fast Switching
Short Sample and Hold Aperture Time

Specifications

Product Category	JFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Configuration	Single	Vgs - Gate-Source Breakdown Voltage	- 35 V
Product Type	JFETs	Factory Pack Quantity	3000
Subcategory	Transistors	Type	JFET
Part # Aliases	SST112-E3	Unit Weight	0.000282 oz