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STD830CP40 +BOM

Space-saving pair of transistors for increased board efficien

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STD830CP40 General Description

Bipolar (BJT) Transistor Array 1 NPN, 1 PNP 400V 3A 3W Through Hole 8-DIP

Key Features

  • Low VCE(sat)
  • Simplified circuit design
  • Reduced component count
  • Low spread of dynamic parameters

Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity NPN, PNP Configuration Dual
Collector- Emitter Voltage VCEO Max 400 V Collector- Base Voltage VCBO 500 V, 700 V
Emitter- Base Voltage VEBO 10 V, 18 V Collector-Emitter Saturation Voltage 500 mV
Maximum DC Collector Current 6 A Pd - Power Dissipation 3 W
Maximum Operating Temperature + 150 C Series STD830CP40
Continuous Collector Current 3 A DC Collector/Base Gain hfe Min 18 at 700 mA, 5 V
DC Current Gain hFE Max 34 at 700 mA, 5 V Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 2000 Subcategory Transistors
Technology Si Unit Weight 0.016932 oz

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