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STPSC10065DY +BOM
Automotive 650 V, 10 A SiC Power Schottky Diode
TO-220AC-2-
Manufacturer:
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Mfr.Part #:
STPSC10065DY
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Datasheet:
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Series:
Automotive, AEC-Q101, ECOPACK®2
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Technology:
SiC (Silicon Carbide) Schottky
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Voltage - DC Reverse (Vr) (Max):
650 V
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Current - Average Rectified (Io):
10A
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EDA/CAD Models:
Availability: 6867 PCS
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STPSC10065DY General Description
The STPSC10065DY is a high-performance power Schottky diode made with a silicon carbide substrate, offering exceptional quality. With a 650V rating, this diode utilizes a wide band gap material to enable the design of a Schottky diode structure that delivers superior efficiency. Its Schottky construction eliminates recovery at turn-off and significantly reduces ringing patterns, while the capacitive turn-off behavior remains consistent across temperature variations. Designed for PFC applications, this ST SiC diode enhances performance in tough hard switching conditions. Its impressive forward surge capability ensures reliability during transient phases, making it an ideal choice for demanding applications
Key Features
- AEC-Q101 qualified
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Dedicated to PFC applications
- High forward surge capability
- PPAP capable
- Operating Tj from -40 °C to 175 °C
- ECOPACK®2 compliant component
Specifications
Category | Discrete Semiconductor ProductsDiodesRectifiersSingle Diodes | Series | Automotive, AEC-Q101, ECOPACK®2 |
Technology | SiC (Silicon Carbide) Schottky | Voltage - DC Reverse (Vr) (Max) | 650 V |
Current - Average Rectified (Io) | 10A | Voltage - Forward (Vf) (Max) @ If | 1.45 V @ 10 A |
Speed | No Recovery Time > 500mA (Io) | Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 130 µA @ 650 V | Capacitance @ Vr, F | 670pF @ 0V, 1MHz |
Mounting Type | Through Hole | Operating Temperature - Junction | -40°C ~ 175°C |
Base Product Number | STPSC10065 |
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In Stock: 6,867
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