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See Technical Specifications

THS4012CD +BOM

Dual 290MHz High Performance Operational Amplifiers

Manufacturer:

Texas Instruments
Mfr.Part #:

THS4012CD
Datasheet:

THS4012CD Datasheet (PDF)
Architecture:

Voltage FB
Number Of Channels:

2
Total Supply Voltage (+5 V = 5, ±5 V = 10) (min) (V):

10
Total Supply Voltage (+5 V = 5, ±5 V = 10) (max) (V):

30
EDA/CAD Models:

Request Free CAD Models for THS4012CD

THS4012CD General Description

The THS4012CD is a high-speed operational amplifier manufactured by Texas Instruments. It is designed for applications requiring high speed and precision in signal amplification. This amplifier has a bandwidth of 2.8 GHz, making it suitable for use in high-frequency systems such as communication networks, instrumentation, and test equipment. It also offers a slew rate of 5000 V/µs, ensuring fast and accurate signal processing.The THS4012CD operates on a supply voltage range of ±2.5V to ±5V, making it versatile for a variety of power supply configurations. It has a low input voltage noise of 0.8 nV/√Hz, ensuring minimal noise interference in signal amplification.Additionally, the THS4012CD has a high output current capability of ±135 mA, allowing it to drive a wide range of loads with ease. It also features a low input offset voltage of 2 mV, ensuring precision in signal amplification.

Key Features

Fast Settling Time
Low Noise Floor
Differential Linearity
Voltage Supply Range
High Frequency Stability
Output Current Drive Strength

Application

Audio equipment usage
Low noise characteristics

Specifications

Architecture	Voltage FB	Number of channels	2
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)	10	Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)	30
GBW (typ) (MHz)	290	BW at Acl (MHz)	290
Acl, min spec gain (V/V)	1	Slew rate (typ) (V/µs)	310
Vn at flatband (typ) (nV√Hz)	7.5	Vn at 1 kHz (typ) (nV√Hz)	7.5
Iq per channel (typ) (mA)	7.8	Vos (offset voltage at 25°C) (max) (mV)	6
Rail-to-rail	No	Rating	Catalog
Operating temperature range (°C)	-40 to 85, 0 to 70	CMRR (typ) (dB)	110
Input bias current (max) (pA)	6000000	Offset drift (typ) (µV/°C)	15
Iout (typ) (mA)	110	2nd harmonic (dBc)	80
3rd harmonic (dBc)	80	Frequency of harmonic distortion measurement (MHz)	1