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See Technical Specifications

THS4631DR +BOM

High Speed FET-Input Operational Amplifier

Manufacturer:

TI
Mfr.Part #:

THS4631DR
Datasheet:

THS4631DR Datasheet (PDF)
Architecture:

FET / CMOS Input, Voltage FB
Number Of Channels:

1
Total Supply Voltage (+5 V = 5, ±5 V = 10) (min) (V):

10
Total Supply Voltage (+5 V = 5, ±5 V = 10) (max) (V):

32
EDA/CAD Models:

Request Free CAD Models for THS4631DR

THS4631DR General Description

This operational amplifier boasts a unique combination of features, including a low input voltage noise of 2.9 nV/√Hz, which ensures high signal integrity in even the most challenging environments. Its versatility is further enhanced by its ability to operate on a single power supply ranging from 5V to 12V

Key Features

Wide frequency response and linearity
Suitable for industrial control
High-impedance input stage

Specifications

Architecture	FET / CMOS Input, Voltage FB	Number of channels	1
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)	10	Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)	32
GBW (typ) (MHz)	210	BW at Acl (MHz)	325
Acl, min spec gain (V/V)	1	Slew rate (typ) (V/µs)	1000
Vn at flatband (typ) (nV√Hz)	7	Vn at 1 kHz (typ) (nV√Hz)	7
Iq per channel (typ) (mA)	11.5	Vos (offset voltage at 25°C) (max) (mV)	0.5
Rail-to-rail	No	Rating	Catalog
Operating temperature range (°C)	-40 to 85	CMRR (typ) (dB)	95
Input bias current (max) (pA)	100	Offset drift (typ) (µV/°C)	2.5
Iout (typ) (mA)	95	2nd harmonic (dBc)	76
3rd harmonic (dBc)	94	Frequency of harmonic distortion measurement (MHz)	5