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TJA1020T/N,112 +BOM

/ supply voltage for improved system design flexibilit

TJA1020T/N,112 General Description

1/1 Transceiver LINbus 8-SO

NXP Semiconductor Inventory

Key Features

  • Key Features
  • Baud rate up to 20 Kbaud
  • Very low ElectroMagnetic Emission (EME)
  • High ElectroMagnetic Immunity (EMI)
  • Low slope mode for an even further reduction of EME
  • Passive behaviour in unpowered state
  • Input levels compatible with 3.3 and 5 V devices
  • Integrated termination resistor for Local Interconnect Network (LIN) follower applications
  • Wake-up source recognition (local or remote)
  • Supports K-line like functions
  • Very low current consumption in sleep mode with local and remote wake-up
  • Transmit data (TXD) dominant time-out function
  • Bus terminal and battery pin protected against transients in the automotive environment (ISO7637)
  • Bus terminal short-circuit proof to battery and ground
  • Thermally protected
NXP Semiconductor Original Stock
NXP Semiconductor Inventory

Specifications

Pin Count 8 Released Date Jul 8, 2022
Last Modified Date Mar 7, 2023 4:10 PM UTC
Block diagram: TJA1020T

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TJA1020T/N,112 Datasheet PDF

Preliminary Specification TJA1020T/N,112 PDF Download

TJA1020T/N,112 PDF Preview

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