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See Technical Specifications

TLP2770(TP,E +BOM

20Mbit/s high-speed communication

Manufacturer:

Toshiba Semiconductor and Storage
Mfr.Part #:

TLP2770(TP,E
Datasheet:

TLP2770(TP,E Datasheet (PDF)
Number Of Channels:

1
Inputs - Side 1/Side 2:

1/0
Voltage - Isolation:

5000Vrms
Common Mode Transient Immunity (Min):

20kV/µs
EDA/CAD Models:

Request Free CAD Models for TLP2770(TP,E

TLP2770(TP,E General Description

Toshiba's TLP2770(TP,E) is a reliable optoelectronic device that combines a GaAlAs infrared light emitting diode with a high gain photodetector, making it ideal for applications where electrical isolation is crucial. With a maximum forward current of 50mA and a forward voltage of 1.3V, this device offers efficient performance and low power consumption, making it suitable for industrial automation, power supply control, and motor control systems. Its minimum isolation voltage of 5000Vrms ensures reliable isolation between input and output, while its high-speed response time, with a typical rise time of 18 microseconds and a fall time of 5 microseconds, allows for quick signal processing and high-speed data transmission. Additionally, its compact surface mount package makes it easy to integrate into existing circuit designs, saving space on the PCB

Specifications

Number of Channels	1	Inputs - Side 1/Side 2	1/0
Voltage - Isolation	5000Vrms	Common Mode Transient Immunity (Min)	20kV/µs
Input Type	DC	Output Type	Push-Pull, Totem Pole
Current - Output / Channel	10 mA	Data Rate	20MBd
Propagation Delay tpLH / tpHL (Max)	60ns, 60ns	Rise / Fall Time (Typ)	1.3ns, 1ns
Voltage - Forward (Vf) (Typ)	1.5V	Current - DC Forward (If) (Max)	8mA
Voltage - Supply	2.7V ~ 5.5V	Operating Temperature	-40°C ~ 125°C
Mounting Type	Surface Mount	Base Product Number	TLP2770