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See Technical Specifications

TLV2316IDGKR +BOM

CMOS Amplifier 2 Circuit Rail-to-Rail 8-VSSOP

Manufacturer:

TI
Mfr.Part #:

TLV2316IDGKR
Datasheet:

TLV2316IDGKR Datasheet (PDF)
Number Of Channels:

2
Total Supply Voltage (+5 V = 5, ±5 V = 10) (max) (V):

5.5
Total Supply Voltage (+5 V = 5, ±5 V = 10) (min) (V):

1.8
Rail-to-rail:

In, Out
EDA/CAD Models:

Request Free CAD Models for TLV2316IDGKR

TLV2316IDGKR General Description

One of the standout features of the TLV2316IDGKR is its robust design, which includes integrated RFI/EMI rejection filters and high ESD protection of 4-kV HBM. This makes it incredibly user-friendly and ensures stable operation even in challenging conditions. Additionally, the device is optimized for low-voltage operations, extending from 1.8 V to 5.5 V, making it ideal for a wide range of voltage requirements

Key Features

High Speed and Low Power
Suitable for Digital Systems
Maintenance-Free Design
Compact Package Size

Specifications

Number of channels	2	Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)	5.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)	1.8	Rail-to-rail	In, Out
GBW (typ) (MHz)	10	Slew rate (typ) (V/µs)	6
Vos (offset voltage at 25°C) (max) (mV)	3	Iq per channel (typ) (mA)	0.4
Vn at 1 kHz (typ) (nV√Hz)	12	Rating	Catalog
Operating temperature range (°C)	-40 to 125	Offset drift (typ) (µV/°C)	2
Features	Cost Optimized, EMI Hardened	CMRR (typ) (dB)	90
Iout (typ) (A)	0.05	Architecture	CMOS
Input common mode headroom (to negative supply) (typ) (V)	-0.2	Input common mode headroom (to positive supply) (typ) (V)	0.2
Output swing headroom (to negative supply) (typ) (V)	0.005	Output swing headroom (to positive supply) (typ) (V)	-0.005