This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

TLV6002IDR +BOM

Dual, 5.5-V, 1-MHz, RRIO operational amplifier

Manufacturer:

TI
Mfr.Part #:

TLV6002IDR
Datasheet:

TLV6002IDR Datasheet (PDF)
Number Of Channels:

2
Total Supply Voltage (+5 V = 5, ±5 V = 10) (max) (V):

5.5
Total Supply Voltage (+5 V = 5, ±5 V = 10) (min) (V):

1.8
Rail-to-rail:

In, Out
EDA/CAD Models:

Request Free CAD Models for TLV6002IDR

TLV6002IDR General Description

Designed as part of the TLV600x family from Texas Instruments, the TLV6002IDR stands out for its exceptional combination of precision, efficiency, and compactness. Whether it's used in sensor interfaces, industrial automation, or portable medical devices, this dual op-amp delivers consistent performance and reliable operation in a wide range of applications. Its low-power consumption and high accuracy make it a valuable asset for engineers seeking a robust solution for their design challenges

Key Features

Quality Amplification
Low Power Usage
Stable Operation

Specifications

Number of channels	2	Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)	5.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)	1.8	Rail-to-rail	In, Out
GBW (typ) (MHz)	1	Slew rate (typ) (V/µs)	0.5
Vos (offset voltage at 25°C) (max) (mV)	4.5	Iq per channel (typ) (mA)	0.075
Vn at 1 kHz (typ) (nV√Hz)	28	Rating	Catalog
Operating temperature range (°C)	-40 to 125	Offset drift (typ) (µV/°C)	2
Features	Cost Optimized, EMI Hardened	Input bias current (max) (pA)	76
CMRR (typ) (dB)	76	Iout (typ) (A)	0.015
Architecture	CMOS	Input common mode headroom (to negative supply) (typ) (V)	-0.2
Input common mode headroom (to positive supply) (typ) (V)	0.2	Output swing headroom (to negative supply) (typ) (V)	0.075
Output swing headroom (to positive supply) (typ) (V)	-0.1