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High-performance infrared LED for precise application
T-1 3/4Manufacturer:
TELEFUNKEN MICROELECTRONICS GMBH
Mfr.Part #:
TSFF5200
Datasheet:
Part Life Cycle Code:
Transferred
HTS Code:
8541.40.20.00
Forward Current-Max:
0.1 A
Forward Voltage-Max:
1.6 V
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DESCRIPTIONTSFF5210 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.FEATURES• Package type: leaded• Package form: T-1 3/4• Dimensions (in mm): Ø 5• Leads with stand-off• Peak wavelength: λp = 870 nm• High reliability• High radiant power• High radiant intensity• Angle of half intensity: ϕ = ± 10°• Low forward voltage• Suitable for high pulse current operation• High modulation bandwidth: fc = 24 MHz• Good spectral matching with Si photodetectors• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/ECAPPLICATIONS• Infrared video data transmission between camcorder and TV set• Free air data transmission systems with high modulation frequencies or high data transmission rate requirements• Smoke-automatic fire detectors
Part Life Cycle Code | Transferred | Reach Compliance Code | |
HTS Code | 8541.40.20.00 | Forward Current-Max | 0.1 A |
Forward Voltage-Max | 1.6 V | JESD-609 Code | e0 |
Mounting Feature | THROUGH HOLE MOUNT | Operating Temperature-Max | 85 °C |
Operating Temperature-Min | -25 °C | Peak Wavelength | 870 nm |
Reverse Voltage-Max | 5 V | Semiconductor Material | GaAlAs |
Spectral Bandwidth | 4e-8 m | Surface Mount | NO |
Terminal Finish | Tin/Lead (Sn/Pb) | Viewing Angle | 20 deg |
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