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1EDI60N12AF +BOM

Integrated circuit for driving power MOSFETs

Manufacturer:

INFINEON
Mfr.Part #:

1EDI60N12AF
Datasheet:

1EDI60N12AF Datasheet (PDF)
Input Vcc Max:

17.0 V
Input Vcc Min:

3.1 V
Configuration:

High-side
Isolation Type:

Galvanic isolation - Functional
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1EDI60N12AF General Description

The 1EDI60N12AF EiceDRIVER™ Compact 1200 V single-channel isolated gate driver is a high-performance solution for driving MOSFETs in various power applications. With typical sinking and sourcing peak output currents of 9.4/10 A, this driver is designed for efficient and reliable operation. The DSO-8 narrow package with 4 mm creepage distance ensures safe and space-saving PCB design. This driver is part of the 1ED-AF family, offering separate sink and source outputs, a 40 ns input filter, and accurate timing for precise control of the power stage. Its wide supply voltage range and compatibility with unipolar or bipolar configurations make it suitable for a variety of designs

Specifications

Input Vcc max	17.0 V	Input Vcc min	3.1 V
Configuration	High-side	Isolation Type	Galvanic isolation - Functional
Product Category	Gate Drivers	Product	MOSFET Gate Drivers
Type	High-Side	Mounting Style	SMD/SMT
Number of Drivers	1 Driver	Number of Outputs	1 Output
Output Current	6 A	Supply Voltage - Min	3.1 V
Supply Voltage - Max	17 V	Rise Time	10 ns
Fall Time	9 ns	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 150 C	Series	1ED Compact
Logic Type	CMOS	Moisture Sensitive	Yes
Pd - Power Dissipation	400 mW	Product Type	Gate Drivers
Propagation Delay - Max	150 ns	Shutdown	Shutdown
Factory Pack Quantity	2500	Subcategory	PMIC - Power Management ICs
Technology	Si	Tradename	EiceDRIVER
Part # Aliases	SP001037224 1EDI60N12AFXUMA1	Unit Weight	0.002928 oz