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1EDS20I12SV +BOM

Ideal for high power applications requiring precise control and protection of gate signals

Manufacturer:

infineon
Mfr.Part #:

1EDS20I12SV
Datasheet:

1EDS20I12SV Datasheet (PDF)
Input Vcc Max:

5.5 V
Input Vcc Min:

4.85 V
Configuration:

High-side
Isolation Type:

Galvanic isolation - Reinforced

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

1EDS20I12SV General Description

In the fast-paced world of technology, the 1EDS20I12SV chip offers a beacon of stability and innovation. Its state-of-the-art features and robust construction make it a standout performer in the realm of semiconductor components, setting a new standard for excellence in power electronics. With this chip powering your industrial and automotive systems, you can be confident in the performance and reliability of your equipment, knowing that you have a superior solution at your fingertips

Key Features

Dedicated gate driver ICs for high-voltage GaN power switches (CoolGaN™, GIT technology based products)
– low driving impedance (on-resistance 0.85 Ω source, 0.35 Ω sink)
– resistor programmable gate current (typ. 10 mA) in steady “on” state
– programmable negative gate voltage to completely avoid spurious turn-on
Single output supply voltage (typ. 8 V, floating)
Switching behavior independent of duty-cycle (2 "off" voltage levels)
Differential concept to ensure negative gate drive voltage under any condition
Fast input-to-output propagation (37 ns) with excellent stability (+7/-6 ns)
Galvanic input-to-output isolation based on coreless transformer (CT) technology
Common mode transient immunity (CMTI)> 200 V/ns
3 package versions
– 1EDF5673K: 13-pin LGA (5 x 5 mm, PG-TFLGA-13-1) for functional isolation (1.5 kV)
– 1EDF5673F: 16-pin P-DSO (150 mil, PG-DSO-16-11) for functional isolation (1.5 kV)
– 1EDS5663H: 16-pin P-DSO (300 mil, PG-DSO-16-30) for safe isolation (6 kV)
Fully qualified according to JEDEC for Industrial Applications