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1N8030-GA +BOM

Diode 650 V 750mA Through Hole TO-257

Manufacturer:

GeneSiC Semiconductor
Mfr.Part #:

1N8030-GA
Datasheet:

1N8030-GA Datasheet (PDF)
Technology:

SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):

650 V
Current - Average Rectified (Io):

750mA
Voltage - Forward (Vf) (Max) @ If:

1.39 V @ 750 mA

1N8030-GA General Description

Diode 650 V 750mA Through Hole TO-257

Specifications

Series	-	Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	650 V	Current - Average Rectified (Io)	750mA
Voltage - Forward (Vf) (Max) @ If	1.39 V @ 750 mA	Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns	Current - Reverse Leakage @ Vr	5 µA @ 650 V
Capacitance @ Vr, F	76pF @ 1V, 1MHz	Mounting Type	Through Hole
Operating Temperature - Junction	-55°C ~ 250°C	Base Product Number	1N8030

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