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2N5196 +BOM
TRANSISTOR,JFET,N-CHANNEL, DUAL,50V V(BR)DSS,7MA I(DSS),TO-71(6)
TO-71-
Manufacturer:
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Mfr.Part #:
2N5196
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Datasheet:
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Technology:
Si
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Mounting Style:
Through Hole
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Transistor Polarity:
N-Channel
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Configuration:
Dual
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EDA/CAD Models:
Availability: 7072 PCS
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2N5196 General Description
DESCRIPTIONThe 2N5196/5197/5198/5199 JFET duals are designed for high-performance differential amplification for a wide range of precision test instrumentation applications. This series features tightly matched specs, low gate leakage for accuracy, and wide dynamic range with IG guaranteed at VDG = 20 V.The hermetically-sealed TO-71 package is available with full military processing (see Military Information and the 2N5545/5546/5547JANTX/JANTXV data sheet).FEATURES ● Monolithic Design● High Slew Rate● Low Offset/Drift Voltage● Low Gate Leakage: 5 pA● Low Noise● High CMRR: 100 dBBENEFITS● Tight Differential Match vs. Current● Improved Op Amp Speed, Settling Time Accuracy● Minimum Input Error/Trimming Requirement● Insignificant Signal Loss/Error Voltage● High System Sensitivity● Minimum Error with Large Input SignalAPPLICATIONS● Wideband Differential Amps● High-Speed, Temp-Compensated, Single-Ended Input Amps● High Speed Comparators● Impedance Converters
Specifications
Product Category | JFET | Technology | Si |
Mounting Style | Through Hole | Transistor Polarity | N-Channel |
Configuration | Dual | Vds - Drain-Source Breakdown Voltage | 10 V |
Vgs - Gate-Source Breakdown Voltage | - 50 V | Gate-Source Cutoff Voltage | - 4 V |
Drain-Source Current at Vgs=0 | 7 mA | Id - Continuous Drain Current | 5 mA |
Pd - Power Dissipation | 300 mW | Forward Transconductance - Min | 1 mS |
Product Type | JFETs | Factory Pack Quantity | 1 |
Subcategory | Transistors | Type | JFET |
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In Stock: 7,072
Minimum Order: 1
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