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See Technical Specifications

J309 +BOM

This N-Channel JFET device is designed for high frequency amplifiers and oscillators.

Manufacturer:

InterFET
Mfr.Part #:

J309
Datasheet:

J309 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Configuration:

Single
EDA/CAD Models:

Request Free CAD Models for J309

email

Email: [email protected]

skype

Skype: live:.cid.ab6b29428937b76

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Tel: +852 95804164

J309 General Description

This N-Channel JFET device is designed for high frequency amplifiers and oscillators.

Key Features

Pb-Free Packages are Available

Specifications

Product Category	JFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Configuration	Single	Vds - Drain-Source Breakdown Voltage	10 V
Vgs - Gate-Source Breakdown Voltage	- 25 V	Gate-Source Cutoff Voltage	- 4 V
Drain-Source Current at Vgs=0	30 mA	Id - Continuous Drain Current	1 nA
Pd - Power Dissipation	360 mW	Series	J309
Forward Transconductance - Min	10000 uS	Product Type	JFETs
Factory Pack Quantity	1	Subcategory	Transistors
Type	JFET	Unit Weight	0.016000 oz

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Packing

AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

Warranty

Warranty

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In Stock: 7,072

Minimum Order: 1

Qty.	Unit Price	Ext. Price
1+	-	-

The prices below are for reference only.

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J309

InterFET

Availability: 7,072 PCS

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