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2N5308

TO-98 Packaged NPN Darlington Bipolar Junction Transistor

Manufacturer:

Onsemi
Mfr.Part #:

2N5308
Datasheet:

2N5308 Datasheet (PDF)
Configuration:

Single
Transistor Polarity:

NPN
Collector- Emitter Voltage VCEO Max:

40 V
Emitter- Base Voltage VEBO:

12 V
EDA/CAD Models:

Request Free CAD Models for 2N5308

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2N5308 General Description

2N5308 is a silicon NPN transistor commonly used for amplification and switching purposes in electronic circuits. It has a maximum collector current rating of 200mA and a maximum collector-emitter voltage rating of 40V. The transistor is housed in a TO-92 package, which is a popular through-hole package for small signal transistors.The 2N5308 has a low noise figure and high gain characteristics, making it suitable for low-level audio amplification applications. It has a transition frequency of 225MHz, which indicates its ability to operate at higher frequencies compared to other transistors of similar specifications.The transistor has three pins – collector, base, and emitter – which determine its operating characteristics. The base-emitter junction requires a forward bias voltage of around 0.6 to 0.7V to turn the transistor on and allow current to flow from the collector to the emitter.

Key Features

NPN bipolar junction transistor
Low power, high gain design
TO-18 metal can package
Collector current rating of 800mA
Collector-base voltage rating of 90V
Low noise and low distortion characteristics

Application

Low noise amplifiers
Radio frequency (RF) applications
Audio amplifiers
Oscillators
Microwave transmitters and receivers
Radar systems
Signal processing
Telecommunications
Instrumentation
Medical electronics

Specifications

Product Category	Darlington Transistors	Configuration	Single
Transistor Polarity	NPN	Collector- Emitter Voltage VCEO Max	40 V
Emitter- Base Voltage VEBO	12 V	Collector- Base Voltage VCBO	40 V
Maximum DC Collector Current	1.2 A	Maximum Collector Cut-off Current	100 nA
Mounting Style	Through Hole	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	DC Collector/Base Gain hfe Min	7000
Height	5.33 mm	Length	5.2 mm
Product Type	Darlington Transistors	Factory Pack Quantity	2000
Subcategory	Transistors	Width	4.19 mm
Unit Weight	0.007090 oz