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2SC5086-O,LF +BOM

High-quality bipolar transistor for demanding application

  • Manufacturer:

    Toshiba

  • Mfr.Part #:

    2SC5086-O,LF

  • Datasheet:

    2SC5086-O,LF Datasheet (PDF) pdf-icon

  • Series:

    2SC5086

  • Technology:

    Si

  • Transistor Polarity:

    NPN

  • DC Collector/Base Gain Hfe Min:

    80

2SC5086-O,LF General Description

RF Transistor NPN 12V 80mA 7GHz 100mW Surface Mount SSM

Toshiba Inventory
Toshiba Original Stock

Specifications

Product Category RF Bipolar Transistors Series 2SC5086
Technology Si Transistor Polarity NPN
DC Collector/Base Gain hfe Min 80 Collector- Emitter Voltage VCEO Max 12 V
Emitter- Base Voltage VEBO 3 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 125 C Configuration Single
Mounting Style SMD/SMT Collector- Base Voltage VCBO 20 V
DC Current Gain hFE Max 240 at 20 mA at 10 V Gain Bandwidth Product fT 7 GHz
Maximum DC Collector Current 80 mA Pd - Power Dissipation 100 mW
Product Type RF Bipolar Transistors Factory Pack Quantity 3000
Subcategory Transistors Unit Weight 0.000085 oz

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