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2SC5227A-5-TB-E +BOM

2SC5227A Series 10 V 70 mA Surface Mount RF Transistor - SOT-23-3

Manufacturer:

onsemi
Mfr.Part #:

2SC5227A-5-TB-E
Datasheet:

2SC5227A-5-TB-E Datasheet (PDF)
Series:

2SC5227A
Transistor Type:

Bipolar
Technology:

Si
Transistor Polarity:

NPN

2SC5227A-5-TB-E General Description

The 2SC5227A-5-TB-E is an NPN transistor designed for high frequency applications, boasting a maximum collector-emitter voltage of 10V. Its typical gain bandwidth of 7GHz makes it suitable for high-speed signal amplification tasks. With a power dissipation of 200mW and a DC collector current of 70mA, it can effectively handle moderate power levels. The transistor also offers a high DC current gain (hFE) of 270, ensuring efficient signal amplification. Its SOT-23 case style and 3 pins make it easily integrable into electronic circuits, making it a convenient choice for high frequency applications

Key Features

Low-noise : NF = 1.0 dB typ (f = 1 GHz)
High gain : Forward Transfer Gain = 12 dB typ (f = 1 GHz)
High cut-off frequency : f_T = 7 GHz typ

Specifications

Product Category	RF Bipolar Transistors	Series	2SC5227A
Transistor Type	Bipolar	Technology	Si
Transistor Polarity	NPN	Operating Frequency	7 GHz
DC Collector/Base Gain hfe Min	60 at 20 mA, 5 V	Collector- Emitter Voltage VCEO Max	10 V
Emitter- Base Voltage VEBO	2 V	Continuous Collector Current	70 mA
Minimum Operating Temperature	-	Maximum Operating Temperature	+ 150 C
Configuration	Single	Mounting Style	SMD/SMT
Pd - Power Dissipation	200 mW	Product Type	RF Bipolar Transistors
Factory Pack Quantity	3000	Subcategory	Transistors
Unit Weight	0.000282 oz