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See Technical Specifications

4N35 +BOM

80V 5kV [email protected],10mA 1 6V 1.2V DC DIP-6 Optocouplers - Phototransistor Output ROHS

Manufacturer:

Onsemi
Mfr.Part #:

4N35
Datasheet:

4N35 Datasheet (PDF)
Mounting Style:

Through Hole
Number Of Channels:

1 Channel
Isolation Voltage:

5000 Vrms
Output Type:

NPN Phototransistor
EDA/CAD Models:

Request Free CAD Models for 4N35

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

4N35 General Description

The general purpose optocouplers consist of a galliumarsenide infrared emitting diode driving a silicon phototransistorin a 6-pin dual in-line package.

Key Features

Minimum Current Transfer Ratio at IF = 10 mA, VCE = 10 V:
100% for 4N35
Safety and Regulatory Approvals:UL1577, 5,000 VACRMS for 1 MinuteDIN−EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage (Pending)

Application

Power Supply Regulators
Digital Logic Inputs
Microprocessor Inputs

Specifications

Product Category	Transistor Output Optocouplers	Mounting Style	Through Hole
Number of Channels	1 Channel	Isolation Voltage	5000 Vrms
Output Type	NPN Phototransistor	Current Transfer Ratio - Min	100 %
If - Forward Current	50 mA	Vf - Forward Voltage	1.7 V
Maximum Collector Emitter Voltage	30 V	Maximum Collector Current	100 mA
Maximum Collector Emitter Saturation Voltage	300 mV	Vr - Reverse Voltage	6 V
Pd - Power Dissipation	70 mW	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 100 C	Configuration	1 Channel
Current Transfer Ratio	100 %	Height	3.81 mm
Length	8.7 mm	Product Type	Transistor Output Optocouplers
Factory Pack Quantity	2000	Subcategory	Optocouplers
Width	6.5 mm	Unit Weight	0.012346 oz