This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

70V3579S4DRG +BOM

SRAM - Dual Port, Synchronous Memory IC 1.125Mbit Parallel 4.2 ns 208-PQFP (28x28)

Manufacturer:

Renesas Electronics
Mfr.Part #:

70V3579S4DRG
Datasheet:

70V3579S4DRG Datasheet (PDF)
Memory Size:

1 Mbit
Organization:

32 k x 36
Access Time:

4 ns
Maximum Clock Frequency:

133 MHz
EDA/CAD Models:

Request Free CAD Models for 70V3579S4DRG

70V3579S4DRG General Description

Furthermore, the 70V3579 supports operating voltages of either 3.3V or 2.5V on one or both ports, providing flexibility in voltage control. The OPT pins enable users to easily configure the operating voltage as per their requirements. The core of the device operates at a stable 3.3V, ensuring consistent performance and reliability

Key Features

Advanced power management and thermal control
Robust signal integrity and error-free data transfer
Industrial-grade reliability for harsh environments
Compact packaging options for space-constrained systems

Specifications

Product Category	SRAM	Memory Size	1 Mbit
Organization	32 k x 36	Access Time	4 ns
Maximum Clock Frequency	133 MHz	Supply Voltage - Max	3.45 V
Supply Voltage - Min	3.15 V	Supply Current - Max	460 mA
Minimum Operating Temperature	0 C	Maximum Operating Temperature	+ 70 C
Mounting Style	SMD/SMT	Height	3.5 mm
Length	28 mm	Memory Type	SRAM
Moisture Sensitive	Yes	Product Type	SRAM
Series	70V3579	Factory Pack Quantity	6
Subcategory	Memory & Data Storage	Type	High Speed
Width	28 mm