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74AHCT1G08GW125 +BOM

1uA 4.5V~5.5V 1 7.9ns@5V,50pF AND Gate SOT-353 Gates ROHS

74AHCT1G08GW125 General Description

Engineers and hobbyists alike rely on the 74AHCT1G08GW125 to bridge the gap between different voltage levels in their projects. Its ability to serve as a translator in mixed voltage environments adds a level of convenience and versatility that is hard to match. Whether you're designing a new circuit from scratch or upgrading an existing system, this AND gate delivers the performance and efficiency needed to bring your ideas to life

Key Features

  • Wide supply voltage range from 2.0 to 5.5 V
  • Overvoltage tolerant inputs to 5.5 V
  • High noise immunity
  • CMOS low power dissipation
  • Latch-up performance exceeds 100 mA per JESD 78 Class II Level A
  • Symmetrical output impedance
  • Balanced propagation delays
  • Input levels:For 74AHC1G08: CMOS levelFor 74AHCT1G08: TTL level
  • For 74AHC1G08: CMOS level
  • For 74AHCT1G08: TTL level
  • ESD protection:HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 VCDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
  • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
  • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
  • Specified from -40 °C to +125 °C

Specifications

Type number 74AHCT1G08GW VCC (V) 4.5 - 5.5
Logic switching levels TTL Output drive capability (mA) ± 8
tpd (ns) 3.6 fmax (MHz) 60
Nr of bits 1 Power dissipation considerations low
Tamb (°C) -40~125 Rth(j-a) (K/W) 312
Ψth(j-top) (K/W) 82.5 Rth(j-c) (K/W) 183
Packing SOT353-1_125 Orderable part number 74AHCT1G08GW,125
Chemical content 74AHCT1G08GW

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