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See Technical Specifications

74HC1G00GW,125 +BOM

20uA 2V~6V 1 23ns@6V,50pF NAND Gates SOT-353 Gates ROHS

Manufacturer:

Nexperia
Mfr.Part #:

74HC1G00GW,125
Datasheet:

74HC1G00GW,125 Datasheet (PDF)
Type Number:

74HC1G00GW
VCC (V):

2.0 - 6.0
Logic Switching Levels:

CMOS
Output Drive Capability (mA):

± 2.6
EDA/CAD Models:

Request Free CAD Models for 74HC1G00GW,125

74HC1G00GW,125 General Description

Ideal for use in a wide range of applications, the 74HC1G00GW,125 offers reliable performance and versatility as a basic building block in electronic designs. Its compact size and efficient operation make it a convenient choice for projects requiring a single NAND gate functionality

Key Features

Wide supply voltage range from 2.0 V to 6.0 V
CMOS low power dissipation
Input levels:For 74HC1G00: CMOS levelFor 74HCT1G00: TTL level
For 74HC1G00: CMOS level
For 74HCT1G00: TTL level
Symmetrical output impedance
High noise immunity
Latch-up performance exceeds 100 mA per JESD78 Class II Level B
Balanced propagation delays
Complies with JEDEC standards:JESD8C (2.7 V to 3.6 V)JESD7A (2.0 V to 6.0 V)
JESD8C (2.7 V to 3.6 V)
JESD7A (2.0 V to 6.0 V)
ESD protection:HBM JESD22-A114E exceeds 2000 VMM JESD22-A115-A exceeds 200 V
HBM JESD22-A114E exceeds 2000 V
MM JESD22-A115-A exceeds 200 V
Specified from -40 °C to +85 °C and -40 °C to +125 °C

Specifications

Type number	74HC1G00GW	VCC (V)	2.0 - 6.0
Logic switching levels	CMOS	Output drive capability (mA)	± 2.6
tpd (ns)	7.0	fmax (MHz)	36
Nr of bits	1	Power dissipation considerations	low
Tamb (°C)	-40~125	Rth(j-a) (K/W)	261
Ψth(j-top) (K/W)	39.3	Rth(j-c) (K/W)	138
Packing	SOT353-1_125	Orderable part number	74HC1G00GW,125
Chemical content	74HC1G00GW